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the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. ? 2002 mos field effect transistor pa1793 switching n- and p-channel power mos fet data sheet document no. g16059ej1v0ds00 (1st edition) date published september 2002 ns cp(k) printed in japan description the pa1793 is n- and p-channel mos field effect transistors designed for motor drive application. features ? low on-state resistance n-channel r ds(on)1 = 69 m ? max. (v gs = 4.5 v, i d = 1.5 a) r ds(on)2 = 72 m ? max. (v gs = 4.0 v, i d = 1.5 a) r ds(on)3 = 107 m ? max. (v gs = 2.5 v, i d = 1.0 a) p-channel r ds(on)1 = 115 m ? max. (v gs = ?4.5 v, i d = ?1.5 a) r ds(on)2 = 120 m ? max. (v gs = ?4.0 v, i d = ?1.5 a) r ds(on)3 = 190 m ? max. (v gs = ?2.5 v, i d = ?1.0 a) ? low input capacitance n-channel c iss = 160 pf typ. p-channel c iss = 370 pf typ. ? built-in g-s protection diode ? small and surface mount package (power sop8) ordering information part number package pa1793g power sop8 remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. package drawing (unit: mm) 1.27 0.12 m 6.0 0.3 4.4 0.40 +0.10 ?0.05 0.78 max. 0.05 min. 1.8 max. 1.44 0.8 0.5 0.2 0.15 +0.10 ?0.05 5.37 max. 0.10 14 85 1 2 7, 8 3 4 5, 6 ; source 1 ; gate 1 ; drain 1 ; source 2 ; gate 2 ; drain 2 n-channel p-channel equivalent circuit source body diode gate protection diode gate drain source body diode gate protection diode gate drain p-channel n-channel
datasheet g16059ej1v0ds 2 pa1793 absolute maximum ratings (t a = 25c, all terminals are connected.) parameter symbol n-channel p-channel unit drain to source voltage (v gs = 0 v) v dss 20 ?20 v gate to source voltage (v ds = 0 v) v gss 12 m 12 v drain current (dc) i d(dc) 3 m 3 a drain current (pulse) note1 i d(pulse) 12 m 12 a total power dissipation (1 unit) note2 p t 1.7 w total power dissipation (2 units) note2 p t 2.0 w channel temperature t ch 150 c storage temperature t stg ?55 to +150 c notes 1. pw 10 s, duty cycle 1% 2. mounted on ceramic substrate of 5500 mm 2 2.2 mm, t a = 25c
datasheet g16059ej1v0ds 3 pa1793 electrical characteristics (t a = 25c, all terminals are connected.) a) n-channel characteristice symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 10 a gate leakage current i gss v gs = 12 v, v ds = 0 v 10 a gate cut-off voltage v gs(off) v ds = 10 v, i d = 1 ma 0.5 1.0 1.5 v forward transfer admittance | y fs |v ds = 10 v, i d =1.5 a 1.0 s drain to source on-state resistance r ds(on)1 v gs = 4.5 v, i d = 1.5 a 55 69 m ? r ds(on)2 v gs = 4.0 v, i d = 1.5 a 57 72 m ? r ds(on)3 v gs = 2.5 v, i d = 1.0 a 78 107 m ? input capacitance c iss v ds = 10 v 160 pf output capacitance c oss v gs = 0 v 60 pf reverse transfer capacitance c rss f = 1 mhz 40 pf turn-on delay time t d(on) v dd = 10 v, i d = 1.5 a 17 ns rise time t r v gs = 4.0 v 50 ns turn-off delay time t d(off) r g = 10 ? 86 ns fall time t f 80 ns total gate charge q g v dd = 16 v 3.1 nc gate to source charge q gs v gs = 4.0 v 0.7 nc gate to drain charge q gd i d = 3.0 a 1.4 nc body diode forward voltage v f(s-d) i f = 3.0 a, v gs = 0 v 0.86 v reverse recovery time t rr i f = 3 a, v gs = 0 v 70 ns reverse recovery charge q rr di/dt = 50 a/ s12nc test circuit 2 gate charge test circuit 1 switching time pg. r g 0 v gs d.u.t. r l v dd = 1 s duty cycle 1% pg. 50 ? d.u.t. r l v dd i g = 2 ma v gs wave form v ds wave form v gs v ds 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10%
datasheet g16059ej1v0ds 4 pa1793 b) p-channel characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = ?20 v, v gs = 0 v ?10 a gate leakage current i gss v gs = m 12 v, v ds = 0 v m 10 a gate cut-off voltage v gs(off) v ds = ?10 v, i d = ?1 ma ?0.5 ?1.0 ?1.5 v forward transfer admittance | y fs |v ds = ?10 v, i d = ?1.5 a 1.0 s drain to source on-state resistance r ds(on)1 v gs = ?4.5 v, i d = ?1.5 a 75 115 m ? r ds(on)2 v gs = ?4.0 v, i d = ?1.5 a 80 120 m ? r ds(on)3 v gs = ?2.5 v, i d = ?1.0 a 116 190 m ? input capacitance c iss v ds = ?10 v 370 pf output capacitance c oss v gs = 0 v 110 pf reverse transfer capacitance c rss f = 1 mhz 40 pf turn-on delay time t d(on) v dd = ?10 v, i d = ?1.5 a 120 ns rise time t r v gs = ?4.0 v 260 ns turn-off delay time t d(off) r g = 10 ? 410 ns fall time t f 360 ns total gate charge q g v dd = ?10 v 3.4 nc gate to source charge q gs v gs = ?4.0 v 1.3 nc gate to drain charge q gd i d = ?3.0 a 1.6 nc body diode forward voltage v f(s-d) i f = 3.0 a, v gs = 0 v 0.86 v reverse recovery time t rr i f = 3 a, v gs = 0 v 24 ns reverse recovery charge q rr di/dt = 10 a/ s1.5nc test circuit 2 gate charge test circuit 1 switching time pg. r g 0 v gs ( ? ) d.u.t. r l v dd = 1 s duty cycle 1% pg. 50 ? d.u.t. r l v dd i g = ? 2 ma v gs wave form v ds wave form v gs ( ? ) v ds ( ? ) 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10% v gs wave form v ds wave form v gs ( ? ) v ds ( ? ) 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10%
datasheet g16059ej1v0ds 5 pa1793 typical characteristics (t a = 25c) a) n-channel derating factor of forward bias safe operating area total power dissipation vs. ambient temperature dt - percentage of rated power - % 0 20 40 60 80 100 0 25 50 75 100 125 150 175 p t - total power dissi p ation - w 0 0.4 0.8 1.2 1.6 2 2.4 2.8 0 25 50 75 100 125 150 175 mounted on ceramic substrate of 5500 mm 2 x 2.2 mm 2 units 1 unit t a - ambient temperature - ct a - ambient temperature - c forward bias safe operating area i d - drain current - a 0.01 0.1 1 10 100 0.1 1 10 100 i d(pulse) t a = 25 c single pulse 10 ms power dissipation limited i d(dc) pw = 100 s 1 ms dc r ds(on) limited (at v gs = 4.5 v) mounted on ceramic substrate of 5500 mm 2 x 2.2 mm, 1 unit 100 ms v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w 0.01 0.1 1 10 100 1000 mounted on ceramic substrate of 5500 mm 2 x 2.2 mm single pulse, 1 unit, t a = 25 c r th(ch-a) = 73.5 c/w pw - pulse width - s 100 1 m 10 m 100 m 1 10 100 1000
datasheet g16059ej1v0ds 6 pa1793 a) n-channel forward transfer characteristics drain current vs. drain to source voltage i d - drain current - a 0.01 0.1 1 10 0123 v ds = 10 v pulsed t ch = 125 c 75 c 25 c ? 25 c v gs - gate to source voltage - v i d - drain current - a 0 2 4 6 8 10 12 14 00.511.522.53 v gs = 4.5 v pulsed 4.0 v 2.5 v v ds - drain to source voltage - v forward transfer admittance vs. drain current drain to source on-state resistance vs. gate to source voltage | y fs | - forward transfer admittance - s 0.1 1 10 100 0.01 0.1 1 10 v ds = 10 v pulsed t ch = 125 c 75 c 25 c ? 25 c r ds(on) - drain to source on-state resistance - m ? 0 50 100 150 200 024681012 pulsed i d = 3 a 1.5 a i d - drain current - a v gs - gate to source voltage - v drain to source on-state resistance vs. drain current gate cut-off voltage vs. channel temperature 0 50 100 150 0.1 1 10 100 4.0 v pulsed 4.5 v v gs = 2.5 v 0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150 v ds = 10 v i d = 1 ma r ds(on) - drain to source on-state resistance - m ? i d - drain current - a v gs(off) - gate cut-off voltage - v t ch - channel temperature - c
datasheet g16059ej1v0ds 7 pa1793 a) n-channel drain to source on-state resistance vs. channel temperature source to drain diode forward voltage 0 50 100 150 -50 0 50 100 150 v gs = 2.5 v 4.5 v 4.0 v pulsed 0.01 0.1 1 10 100 00.51 pulsed v gs = 4.5 v 0 v r ds(on) - drain to source on-state resistance - m ? t ch - channel temperature - c i f - diode forward current - a v f(s-d) - source to drain voltage - v capacitance vs. drain to source voltage switching characteristics c iss , c oss , c rss - capacitance - pf 10 100 1000 0.1 1 10 100 v gs = 0 v f = 1 mhz c iss c rss c oss v ds - drain to source voltage - v t d(on) , t r , t d(off) , t f - switching time - ns 1 10 100 1000 0.1 1 10 100 v dd = 10 v v gs = 4 v r g = 10 ? t f t r t d(on) t d(off) i d - drain current - a reverse recovery time vs. diode forward current dynamic input/output characteritics t rr - reverse recovery time - ns 1 10 100 1000 0.1 1 10 100 di/dt = 50 a/ s v gs = 0 v v ds - drain to source voltage - v 0 4 8 12 16 20 01234 0 1 2 3 4 5 i d = 3 a v ds v gs v dd = 16 v 10 v 4 v v gs - gate to source voltage - v i f - diode forward current - a q g - gate charge - nc
datasheet g16059ej1v0ds 8 pa1793 b) p-channel derating factor of forward bias safe operating area total power dissipation vs. ambient temperature dt - percentage of rated power - % 0 20 40 60 80 100 0 25 50 75 100 125 150 175 p t - total power dissi p ation - w 0 0.4 0.8 1.2 1.6 2 2.4 2.8 0 25 50 75 100 125 150 175 mounted on ceramic substrate of 5500 mm 2 x 2.2 mm 1 unit 2 units t a - ambient temperature - ct a - ambient temperature - c forward bias safe operating area i d - drain current - a - 0.01 - 0.1 - 1 - 10 - 100 - 0.1 - 1 - 10 - 100 i d(pulse) t a = 25 c single pulse 10 ms power dissipation limited i d(dc) pw = 100 s 1 ms dc r ds(on) limited (at v gs = ? 4.5 v) mounted on ceramic substrate of 5500 mm 2 x 2.2 mm, 1 unit 100 ms v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w 0.01 0.1 1 10 100 1000 mounted on ceramic substrate of 5500 mm 2 x 2.2 mm single pulse, 1 unit, t a = 25 c r th(ch-a) = 73.5 c/w pw - pulse width - s 100 1 m 10 m 100 m 1 10 100 1000
datasheet g16059ej1v0ds 9 pa1793 b) p-channel forward transfer characteristics drain current vs. drain to source voltage i d - drain current - a - 0.01 - 0.1 - 1 - 10 0 - 1 - 2 - 3 v ds = ? 10 v pulsed t ch = 125 c 75 c 25 c ? 25 c v gs - gate to source voltage - v i d - drain current - a 0 - 2 - 4 - 6 - 8 - 10 - 12 - 14 0 - 0.5 - 1 - 1.5 - 2 - 2.5 - 3 v gs = ? 4.5 v pulsed ? 4.0 v ? 2.5 v v ds - drain to source voltage - v forward transfer admittance vs. drain current drain to source on-state resistance vs. gate to source voltage | y fs | - forward transfer admittance - s 0.1 1 10 100 - 0.01 - 0.1 - 1 - 10 v ds = ? 10 v pulsed t ch = 125 c 75 c 25 c ? 25 c r ds(on) - drain to source on-state resistance - m ? 0 50 100 150 200 250 300 0 - 2 - 4 - 6 - 8 - 10 - 12 pulsed i d = ? 3 a ? 1.5 a i d - drain current - a v gs - gate to source voltage - v drain to source on-state resistance vs. drain current gate cut-off voltage vs. channel temperature 0 50 100 150 200 250 300 - 0.1 - 1 - 10 - 100 ? 4.0 v pulsed ? 4.5 v v gs = ? 2.5 v 0 - 0.2 - 0.4 - 0.6 - 0.8 - 1 - 1.2 - 1.4 -50 0 50 100 150 v ds = ? 10 v i d = ? 1 ma r ds(on) - drain to source on-state resistance - m ? i d - drain current - a v gs(off) - gate cut-off voltage - v t ch - channel temperature - c
datasheet g16059ej1v0ds 10 pa1793 ) p-channel drain to source on-state resistance vs. channel temperature source to drain diode forward voltage 0 50 100 150 200 -50 0 50 100 150 v gs = ? 2.5 v ? 4.5 v ? 4.0 v pulsed - 0.01 - 0.1 - 1 - 10 - 100 00.51 pulsed v gs = ? 4.5 v 0 v r ds(on) - drain to source on-state resistance - m ? t ch - channel temperature - c i f - diode forward current - a v f(s-d) - source to drain voltage - v capacitance vs. drain to source voltage switching characteristics c iss , c oss , c rss - capacitance - pf 10 100 1000 - 0.1 - 1 - 10 - 100 v gs = 0 v f = 1 mhz c iss c rss c oss v ds - drain to source voltage - v t d(on) , t r , t d(off) , t f - switching time - ns 10 100 1000 10000 - 0.1 - 1 - 10 - 100 v dd = -10 v v gs = ? 4 v r g = 10 ? t f t r t d(on) t d(off) i d - drain current - a reverse recovery time vs. diode forward current dynamic input/output characteritics t rr - reverse recovery time - ns 1 10 100 - 0.1 - 1 - 10 - 100 di/dt = 10 a/ s v gs = 0 v v ds - drain to source voltage - v 0 - 4 - 8 - 12 - 16 - 20 01234 0 - 1 - 2 - 3 - 4 - 5 i d = 3 a v ds v gs v dd = 16 v 10 v 4 v v gs - gate to source voltage - v i f - diode forward current - a q g - gate charge - nc
datasheet g16059ej1v0ds 11 pa1793 [memo]
pa1793 m8e 00. 4 the information in this document is current as of september, 2002. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product before using it in a pa rticular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above). ? ? ? ? ? ?

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